Dr. Alok Ranjan
Alok earned Bachelor of Technology (B. Tech) in 2014 at the Department of Electrical and Electronics Engineering at National Institute of Technology (NIT) Nagaland, India. Alok earned his PhD at Singapore University of Technology and Design (SUTD) in 2019 working on the nanoscale reliability characterization of gate dielectrics with Prof. Pey Kin Leong and Dr. Sean O’Shea (IMRE, ASTAR, Singapore). Alok is now a postdoctoral researcher with Prof. Eva Olsson in the Department of Physics at Chalmers University of Technology.
1. Corelating structure-property in emerging semiconductor memory devices
2. Development of in-situ and in-operando TEM techniques
3. Reliability and failure analysis of conventional and 2D layered gate dielectrics
1. “Molecular bridges link monolayers of hexagonal boron nitride during dielectric breakdown” by A. Ranjan, S.J. O’Shea, A. Padovani, T. Su, P. L. Torraca, Y.S. Ang, M.S. Munde, C. Zhang, X. Zhang, M. Bosman, N. Raghavan, K.L. Pey, ACS Applied Electronic Materials, (2023).
2. “Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal embedded HfO2 using Defect Nanospectroscopy” by A. Ranjan, F.M. Puglisi, J. Molina, P. Pavan. S.J. O’Shea, N. Raghavan and K.L. Pey, ACS Applied Electronic Materials, (2022).
3. “Dielectric Breakdown in Single-crystal Hexagonal Boron Nitride” by A. Ranjan, N. Raghavan, M. Holwill, K. Watanabe, T. Taniguchi, K.S. Novoselov, K.L. Pey, S.J O’Shea, ACS Applied Electronic Materials, Vol. 3, Issue 8, (2021).
4. “Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride” by A. Ranjan, S.J O’Shea, M. Bosman, N. Raghavan and K.L. Pey, ACS Applied Materials & Interfaces, Vol. 12, Issue 49, (2020).
5. “Correlation between Adhesion and Dielectric Breakdown in Silicon Dioxide Thin Films” by A. Ranjan, S.J. O’Shea, M. Bosman, J. Molina, N. Raghavan and K.L. Pey, IEEE International Reliability Physics Symposium (IRPS), March (2020).
6. “The Interplay between Drift and Electrical Measurement in Conduction AFM” by A. Ranjan, K.L. Pey and S.J. O’Shea, Review of Scientific Instruments, Vol. 90, Issue 07, 073701, pp. 1-10, (2019).
7. “Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics” by A. Ranjan, N. Raghavan, F.M. Puglisi, S. Mei, A. Padovani, L. Larcher, K. Shubhakar, P. Pavan, M. Bosman, X.X. Zhang, S.J. O’Shea and K.L. Pey, IEEE Electron Device Letters, Vol. 40, Issue 08, pp. 1-4, (2019).
8. "Random Telegraph Noise in 2D Hexagonal Boron Nitride Dielectric Films" by A. Ranjan, F. Puglisi, N. Raghavan, S.J. O'Shea, K. Shubhakar, and K.L. Pey, Applied Physics Letters, Vol. 112, No. 13, 133505, (2018).
9. "Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films" by A. Ranjan, N. Raghavan, S.J. O'Shea, S. Mei, M. Bosman, K. Shubhakar, and K.L. Pey, Scientific Reports, Vol. 8, No. 1, 2854, pp. 1-9, (2018).
10. “Sb2Te3 and Its Superlattices: Optimization by Statistical Design” by J. Behera, X. Zhou, A. Ranjan, R.E. Simson, ACS Applied Materials and Interfaces, Vol. 10, Issue 17, pp. 15040-15050, (2018).
Google Scholar: https://scholar.google.com.sg/citations?user=QDeAXXwAAAAJ&hl=en
For more completed list of my publications and other information, please refer to the attached CV.